Current Issue : January - March Volume : 2016 Issue Number : 1 Articles : 6 Articles
We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed\nsemiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V\ncharacteristics, gate capacitance and field-effect mobility (up to ~50 cm2 VâË?â??1 sâË?â??1) of the TFTs were evaluated with\nbetter precision compared with the results obtained from calculated gate capacitance. The C-V characteristics\nmeasured under different frequencies further enabled the extraction and analysis of the interface trap density at\nthe nanotube-dielectric layer interface, which was found to increase significantly as the network density increases.\nThe results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance\nand to investigate the carrier transport mechanism of TFTs based on carbon nanotubes....
A biopotential acquisition analog front-end (AFE) integrated circuit (IC) is\npresented. The biopotential AFE includes a capacitively coupled chopper instrumentation\namplifier (CCIA) to achieve low input referred noise (IRN) and to block unwanted DC\npotential signals. A DC servo loop (DSL) is designed to minimize the offset voltage in the\nchopper amplifier and low frequency respiration artifacts. An AC coupled ripple rejection\nloop (RRL) is employed to reduce ripple due to chopper stabilization. A capacitive\nimpedance boosting loop (CIBL) is designed to enhance the input impedance and common\nmode rejection ratio (CMRR) without additional power consumption, even under an external\nelectrode mismatch. The AFE IC consists of two-stage CCIA that include three\ncompensation loops (DSL, RRL, and CIBL) at each CCIA stage. The biopotential AFE is\nfabricated using a 0.18 �¼m one polysilicon and six metal layers (1P6M) complementary\nmetal oxide semiconductor (CMOS) process. The core chip size of the AFE without\ninput/output (I/O) pads is 10.5 mm2. A fourth-order band-pass filter (BPF) with a pass-band\nin the band-width from 1 Hz to 100 Hz was integrated to attenuate unwanted signal and\nnoise. The overall gain and band-width are reconfigurable by using programmable\ncapacitors. The IRN is measured to be 0.94 �¼VRMS in the pass band. The maximum\namplifying gain of the pass-band was measured as 71.9 dB. The CIBL enhances the CMRR\nfrom 57.9 dB to 67 dB at 60 Hz under electrode mismatch conditions....
The lighting performances and phosphor degradation in field emission lamps (FELs) with two different kinds of cathode materialsââ?¬â?\nmultiwalled carbon nanotubes (MWCNTs) and carbon nanocoils (CNCs)ââ?¬â?were compared. The MWCNTs and CNCs were\nselectively synthesized on 304 stainless steel wire substrates dip-coated with nanosized Pd catalysts by controlling the growth\ntemperature in thermal chemical vapor deposition, and the film uniformity can be optimized by adjusting the growth time. FELs\nwere successfully fabricated by assembling these cathode filaments with a glass bulb-type anode. The FEL with the CNC cathode\nshowed much higher lighting uniformity and light-spot density and a lower current at the same voltage than that with the MWCNT\ncathode filament, and its best luminous efficiency was as high as 75 lm/W at 8 kV. We also found that, for P22, the phosphor\ndegradation can be effectively suppressed by replacing MWCNTs with CNCs in the cathode, due to the much larger total bright\nspot area and hence much lower current density loading on the anode....
Maximally flat low pass microstrip filter was designed and simulated in this research. The filter was designed at 1 GHz and its lumped parameter model was simulated in ansoft designer SV. The same filter was designed using microstrip technology taking substrate which was having dielectric constant 2.2. The microstrip line model was simulated in Ansoft designer SV and HFSS. The simulated results were compared and it showed good agreement between them....
Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were\nprepared on Pt/TiO...
Employing the arc discharge method we prepared carbon nanotubes, CNTs, in open air deionized\nwater. Their morphology was studied varying the annealing temperature and characterizing by\nRaman Spectroscopy, Transmission Electron Microscopy (TEM), X-Ray Diffractogram (XRD) and\nEnergy Dispersion X-Ray (EDX). According to the study, the CNTs are found self-assembled where\nthe graphene sheets and/or defects are observed sort out themselves with enhancement of temperature....
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